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About Some Peculiarities in Defect Appearence in Elemental and III–V Compound Semiconducting Materials

Published online by Cambridge University Press:  25 February 2011

Maria G. Kalitzova ,
N. K. Pashov ,
G. Vitali  and
M. Rossi
Maria G. Kalitzova
Affiliation:
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Lenin Boulvd, Sofia 1784, Bulgaria
N. K. Pashov
Affiliation:
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Lenin Boulvd, Sofia 1784, Bulgaria
G. Vitali
Affiliation:
Energetics Department, University of Rome “La Sapienza”, via Scarpa 14, 00161 Roma, Italy
M. Rossi
Affiliation:
Energetics Department, University of Rome “La Sapienza”, via Scarpa 14, 00161 Roma, Italy
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Abstract

High Resolution Transmission Electron Microscopy (HRTEM) has been used to obtain direct Information on the structure of damage clusters and in-depth radiation damage distribution in ion-implanted Ge and GaAs with Te+ and Si+ respectively, at doses far below the amorphization threshold. The observed changes in damage contrast in Te+ implanted Ge emphasize the existence of well defined separation between vacancies and interstitials in the lattice damage clusters. For GaAs an integrated “grey zone” was found as a typical effect of Si+ implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 683
Copyright
Copyright © Materials Research Society 1989

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References

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