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Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

Published online by Cambridge University Press:  03 March 2011

L.B. Rowland ,
R.S. Kern ,
S. Tanak  and
Robert F. Davis
L.B. Rowland
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
R.S. Kern
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
S. Tanak
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
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Abstract

Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)–SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C. The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented AlN(0001) films.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 9 , September 1993 , pp. 2310 - 2314
Copyright
Copyright © Materials Research Society 1993

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References

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